ON Semiconductor NTD360N80S3Z SUPERFET® III MOSFET is optimized for the primary switch of a flyback converter that enables lower switching losses and case temperature. This MOSFET incorporates an internal Zener diode that improves the ESD capability. The NTD360N80S3Z MOSFET features 800V drain-to-source voltage (VDSS) 360mΩ maximum drain-to-source resistance RDS(on) and 13A maximum drain current (ID). Typical applications include adapters/chargers LED lighting AUX power audio and industrial power.